r07ds0760ej0100 rev.1.00 page 1 of 9 may 25, 2012 preliminary datasheet rjh60v2bdpp-m0 600v - 12a - igbt application: inverter features ? short circuit withstand time (6 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (at i c = 12 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (25 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 75 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 12 a, rg = 5 ? , ta = 25c, inductive load) outline renesas package code: prss0003af-a (package name: to-220fl) 1 2 3 1. gate 2. collector 3. emitter c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v tc = 25c i c 25 a collector current tc = 100c i c 12 a collector peak current ic(peak) note1 50 a collector to emitter diode forward current i df 12 a collector to emitter diode forward peak current i df (peak) note1 50 a collector dissipation p c note2 34 w junction to case the rmal resistance (igbt) ? j-c note2 3.7 c/ w junction to case thermal resistance (diode) ? j-cd note2 2.5 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c r07ds0760ej0100 rev.1.00 may 25, 2012
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 2 of 9 may 25, 2012 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ces 600 ? ? v ? i c =10 ? a, v ge = 0 zero gate voltage collector current / diode reverse current i ces / i r ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 5.5 ? 7.5 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.6 2.2 v i c = 12 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 2.2 ? v i c = 25 a, v ge = 15 v note3 input capacitance cies ? 450 ? pf output capacitance coes ? 37 ? pf reverse transfer capacitance cres ? 18 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 32 ? nc gate to emitter charge qge ? 5 ? nc gate to collector charge qgc ? 17 ? nc v ge = 15 v v ce = 300 v i c = 12 a turn-on delay time t d(on) ? 33 ? ns rise time t r ? 15 ? ns turn-off delay time t d(off) ? 65 ? ns fall time t f ? 75 ? ns turn-on energy e on ? 0.03 ? mj ? turn-off energy e off ? 0.18 ? mj ? total switching energy e total ? 0.21 ? mj ? v cc = 300 v v ge = 15 v i c = 12 a rg = 5 ??? inductive load short circuit withstand time t sc 3 6 ? ? s tc = 100 ?c v cc ? 360 v, v ge = 15 v frd forward voltage v f ? 2.5 ? v i f = 12 a note3 frd reverse recovery time t rr ? 25 ? ns frd reverse recovery charge q rr ? 0.02 ? ? c frd peak reverse recovery current i rr ? 1.2 ? a i f = 12 a di f /dt = 100 a/ ? s notes: 3. pulse test.
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 3 of 9 may 25, 2012 main characteristics 0200 400 600 800 collector current i c (a) collector to emitter v oltage v ce (v) turn-off safe operation area collector current i c (a) case t emperature t c (c) maximum dc collector current vs. case temperature 02 55 0100 75 125 1501 75 collector dissip ation pc (w) case t emperature t c (c) collector dissip ation vs. case temperature 30 25 20 15 10 5 0 80 60 40 20 0 collector current i c (a) collector to emitter v oltage v ce (v) maximum safe operation area 0.01 100 1 10 0.1 1100 10 1000 tc = 25c single pulse 100 pw = 10 cal output characteristics 12345 collector current i c (a) 0 collector to emitter v oltage v ce (v) v ge = 8 v 12 v 15 v 0 20 10 30 50 40 t c = 25 c pulse t est 10 v typi cal output characteristics 12345 collector current i c (a) 0 collector to emitter v oltage v ce (v) v ge = 8 v 0 20 10 30 50 40 t c = 150 c pulse t est 10 v 12 v 15 v 02 55 0100 75 125 150 175 50 40 30 20 10 0
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 4 of 9 may 25, 2012 10 30 20 40 50 gate to emitter v oltage v ge (v) 1 3 2 4 5 collector to emitter satularion v oltage vs. gate to emitter v oltage ( typi cal) collector to emitter satularion v oltage v ce(sat) (v) t c = 150 c pulse t est collector to emitter saturation v oltage vs. case t emparature ( typi cal) ?25 02 575 125 5 0 100 150 collector to emitter saturation v oltage v ce(sat) (v) case t emparature t c (c) 48 12 20 16 0 0 1 3 2 4 12 a i c = 25 a typi cal t ransfer character istics collector current i c (a) gate to emitter v oltage v ge (v) v ge = 15 v pulse test 0 v ce = 10 v pulse test 150c t c = 25c gate to emitter cuto ff v oltage vs. case t emparature ( typical) 0 2 4 6 8 10 ?25 02 575 125 5 0 100 150 gate to emitter cuto ff v oltage v ge(off) (v) v ce = 10 v pulse test case t emparature t c (c) 1 ma i c = 10 ma 1 3 2 4 5 8 12 20 18 10 1 6 148 12 20 18 10 16 14 t c = 25 c pulse t est i c = 25 a 12 a i c = 25 a 12 a 6 5 4 3 2 1 0 frequency characteristics ( typi cal) collector current i c(rsm) (a) frequency f (khz) 1 100 10 1000 tj = 125c, tc = 90c v ce = 400 v, v ge = 15 v rg = 5 duty = 50% 0 collector current w ave (square wave) collector to emitter saturation v oltage vs. gate to emitter v oltage ( typical) collector to emitter saturation v oltage v ce(sat) (v) gate to emitter v oltage v ge (v)
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 5 of 9 may 25, 2012 11 0 0 10 1 100 10 1100 10 1 100 10 gate registance rg () (inductive load) gate registance rg () (inductive load) swithing energy losses e (mj) switching ti mes t (ns) swithing energy losses e (mj) collector current i c (a) (inductive load) switching characteristics ( typi cal) (1) switching characteristics ( typi cal) (2) switching characteristics ( typi cal) (3) switching characteristics ( typi cal) (4) collector current i c (a) (inductive load) switching ti mes t (ns) 0.1 1 0.01 10 100 1000 t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v i c = 12 a, t c = 150 c v cc = 300 v, v ge = 15 v i c = 12 a, t c = 150 c eoff eon v cc = 300 v, v ge = 15 v rg = 5 c = 150 c 10 1 0.1 0.01 eoff eon 1 100 10 1000 v cc = 300 v, v ge = 15 v rg = 5 c = 150 c t d(off) t d(on) t f t r 10 100 1000 5 025 150 75 125 100 switching characteristics ( typi cal) (5) t d(on) case t emperature t c (c) (inductive load) switching ti mes t (ns) v cc = 300 v, v ge = 15 v i c = 12 a, rg = 5 t f t d(off) t r 0.01 0.1 1 5 025 150 75 125 100 case t emperature t c (c) (inductive load) switching character istics ( typi cal) (6) eoff eon swithing energy losses e (mj) v cc = 300 v, v ge = 15 v i c =12 a, rg = 5
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 6 of 9 may 25, 2012 50 40 30 20 10 0 capacitance c (pf) 1 10 100 10000 1000 0100 501 5 0 200 250 300 cies coes cres gate charge qg (nc) dynamic input character istics ( typi cal) typi cal capacitance vs. collector to emitter v oltage 800 600 400 200 0 0 16 12 8 4 0 10 20 30 40 50 v ge v ce v ge = 0 v f = 1 mhz ta = 25 c collector to emitter v oltage v ce (v) collector to emitter v oltage v ce (v) gate to emitter v oltage v ge (v) v cc = 300 v i c = 12 a tc = 25 c diode current slope di f /dt (a /s) reverse recover y time t rr (ns) reverse recover y time vs. diode current slope ( typi cal) diode current slope di f /dt (a /s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope ( typi cal) diode current slope di f /dt (a/s) reverse recovery charge q rr ( verse recovery charge vs. diode current slope ( typi cal) 8 4 16 12 0 0 40 802 0 0 120 160 v cc = 300 v i f = 17 a tc = 150 c 25 c c-e diode forward v oltage v cef (v) forward current vs. f orward v oltage ( typi cal) forward current i f (a) 012 4 3 t c = 150 c 25 c v ge = 0 v pulse test 100 50 300 250 200 150 0 0 40 802 0 0 120 160 tc = 150 c 25 c v cc = 300 v i f = 17 a 0.20 0.16 0.12 0.08 0.04 0 40 802 0 0 120 1 60 0 tc = 150 c 25 c v cc = 300 v i f = 17 a
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 7 of 9 may 25, 2012 0.01 1 0.1 10 100 1 m10 m 100 m1 10 p dm pw t d = pw t c(t) = (t) ? c c = 2.5c/w, tc = 25c 0.0 5 0.2 0.1 0.5 d = 1 tc = 25c 100 0.01 0.02 1 shot pulse pulse width pw (s) normalized transient thermal impedance (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 100 1 m10 m 100 m1 10 100 p dm pw t d = pw t c(t) = (t) ? c c = 3.7c/w, tc = 25c tc = 25c 0.05 0.02 0.2 0.1 0.5 d = 1 0.01 1 shot pulse
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 8 of 9 may 25, 2012 switching time test circuit diode reverse reco very time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr l 0
rjh60v2bdpp-m0 preliminary r07ds0760ej0100 rev.1.00 page 9 of 9 may 25, 2012 package dimension unit: mm previous code prss0003af-a to-220fl mass[typ.] 1.5g ? jeita package code package name to-220fl 3.6 0.3 15.0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part number quan tity shipping container rjh60v2bdpp-m0#t2 600 pcs box (tube)
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